首页> 外国专利> Novel polymer for preparing resist underlayer film resist underlayer film composition containing the polymer and process for forming resist pattern using the composition

Novel polymer for preparing resist underlayer film resist underlayer film composition containing the polymer and process for forming resist pattern using the composition

机译:用于制备抗蚀剂下层膜的新型聚合物和包含该聚合物的抗蚀剂下层膜组合物以及使用该组合物形成抗蚀剂图案的方法

摘要

The present invention relates to a polymer with novel structures used in processes for preparing a semiconductor or a display, an underlayer film composition for preparing the semiconductor or the display comprising the polymer, and a process to form a resist pattern for preparing the same using the composition. More specifically, the novel polymer of the present invention has an optimized etch selectivity, planarization characteristics, and superior thermal resistance at the same time. Therefore, the underlayer film composition comprising the novel polymer can be utilized as a hard mask in a lithography process for the multilayer semiconductors.
机译:具有新型结构的聚合物本发明涉及一种用于制备半导体或显示器的方法的具有新颖结构的聚合物,用于制备包含该聚合物的半导体或显示器的下层膜组合物,以及使用该聚合物形成抗蚀剂图案的方法。组成。更具体地,本发明的新型聚合物同时具有优化的蚀刻选择性,平坦化特性和优异的耐热性。因此,在多层半导体的光刻工艺中,可以将包含新型聚合物的下层膜组合物用作硬掩模。

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