Production manner of the semiconductor equipment which possesses the field isolation region which consists of the channel which is filled up with the separable material

摘要

The active region the field isolation region which (3) is surrounded the surface where it can provide (2) the silicon itself which it possesses (4) production manner of the semiconductor equipment which it has (1). With this manner, on the surface of silicon itself, auxiliary formation of a certain material it can provide (5), on that, during oxidation, formation of silicon oxide is formed more thickly than on the silicon of silicon itself. Here, the auxiliary formation which has silicon and germanium is formed on the above-mentioned surface, and, aforementioned auxiliary formation Si _{xGe1-x-yC y}, here, when it is the formation of 0.70x0.95 and y0.05, is desirable. Next, the aperture (9) is formed in the auxiliary inside layer in the position where the field isolation region is formed, and, the trench (11) is formed to main internal of silicon. Next, the wall of the trench (12) silicon oxide formation (13) is provided on, and, the wall of the aperture (10) silicon nitride formation (14) is provided, is formed also both by oxidation. Auxiliary formation is not oxidized over thickness the whole that. After the oxidation, formation of the separable material (18) is accumulated, this fills up the trench and the aperture completely. Consequently, until auxiliary formation (17) the non oxidation part exposes, levelling treatment is done, and, the exposure part of auxiliary formation is removed. Therefore, the active region (3) extending the destal where it is present (19) the field isolation region which it possesses (2) is formed on.