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Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices
Methods for aligning patterns on a substrate based on optical properties of a mask layer and related devices
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机译:基于掩模层的光学特性在基板上对准图案的方法及相关装置
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摘要
A method of fabricating a semiconductor device includes forming a material layer on a substrate, forming a mask layer on the material layer, and implanting ions into the mask layer to reduce light absorption thereof. An alignment key may be formed between the material layer and the substrate, and a location of the alignment key may be optically determined through the implanted mask layer. The implanted mask layer is patterned to define a mask pattern, and the material layer is patterned using the mask pattern as an etching mask. Related devices are also discussed.
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