首页> 外国专利> Fabrication methods and structures for micro-reservoir devices

Fabrication methods and structures for micro-reservoir devices

机译:微型容器装置的制造方法和结构

摘要

Methods are provided for making a multi-reservoir device comprising (i) patterning one or more photoresist layers on a substrate; (ii) depositing onto the substrate at least one metal layer by a sputtering process to form a plurality of reservoir caps and conductive traces; (iii) removing the photoresist layers using a liftoff process; (iv) forming a plurality of reservoirs in the substrate; (v) loading each reservoir with reservoir contents (such as a drug or sensor); and (vi) sealing each reservoir. Optionally, the reservoir cap comprises a first conductive metal layer coated with one or more protective noble metal films. To enhance the resistance of the substrate (e.g., a silicon substrate) to etching in vivo, the interior sidewalls of the reservoirs optionally can include a protective coating (e.g., gold, platinum, carbon, silicon carbide, silicon dioxide, and platinum silicide), or sidewalls comprising silicon can be doped with boron or another impurity.
机译:提供了用于制造多储层装置的方法,该方法包括:(i)在衬底上构图一个或多个光刻胶层; (ii)通过溅射工艺在衬底上沉积至少一层金属层,以形成多个储液室盖和导电迹线; (iii)使用剥离工艺去除光致抗蚀剂层; (iv)在基板中形成多个储存器; (v)在每个水库中装满水库内的物品(例如药物或传感器); (vi)密封每个水箱。可选地,储液器盖包括涂覆有一个或多个保护性贵金属膜的第一导电金属层。为了增强衬底(例如,硅衬底)对体内蚀刻的抵抗力,储存器的内侧壁可选地可以包括保护涂层(例如,金,铂,碳,碳化硅,二氧化硅和硅化铂)或包含硅的侧壁可以掺杂硼或其他杂质。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号