Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon transistor gate lines

摘要

The invention includes an electrically conductive line, methods of forming electrically conductive lines, and methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines. In one implementation, a method of forming an electrically conductive line includes providing a silicon-comprising layer over a substrate. An electrically conductive layer is formed over the silicon-comprising layer. An MSi_xN_y-comprising layer is formed over the electrically conductive layer, where “x” is from 0 to 3.0, “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W. An MSi_z-comprising layer is formed over the MSi_xN_y-comprising layer, where “z” is from 1 to 3.0. A TiSi_a-comprising layer is formed over the MSi_z-comprising layer, where “a” is from 1 to 3.0. The silicon-comprising layer, the electrically conductive layer, the MSi_xN_y-comprising layer, the MSi_z-comprising layer, and the TiSi_a-comprising layer are patterned into a stack comprising an electrically conductive line. Other aspects and implementations are contemplated.