首页>
外国专利>
Selective epitaxial growth for tunable channel thickness
Selective epitaxial growth for tunable channel thickness
展开▼
机译:选择性外延生长,可调节沟道厚度
展开▼
页面导航
摘要
著录项
相似文献
摘要
Gate electrodes with selectively tuned channel thicknesses are formed by selective epitaxial growth. Embodiments include forming shallow trench isolation regions in an SOI substrate, selectively removing the nitride stop layer and pad oxide layer in an exposed particular active region, and implementing selective epitaxial growth to increase the thickness of the semiconductor layer in the particular active region. Subsequently, the remaining nitride stop and pad oxide layers in other active regions are removed, gate dielectric layers formed, as by thermal oxidation, and the transistors completed.
展开▼