SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

摘要

In this paper we demonstrate the successful integration ofrnin-situ doped embedded Si:C stressors epitaxially grown in thernsource and drain areas of nMOS devices using a novel CyclicrnDeposition Etch (CDE) process. These layers have substitutional Crncontent ranging between 1% and 2% with potential of achievingrneven higher substitutional carbon concentration. Anotherrndistinctive feature of this process is that it allows for high in-situ Prndoping for ease of integration within a CMOS platform. Werndemonstrate superior performance of strained nMOS devices withrnembedded Si:C showing up to 12.5% on-state current improvementrnover the unstrained reference process. We report on materialrncharacterization results of embedded Si:C stressors, in particular,rnstrain retention properties as a function of subsequent post-epitaxyrnprocessing.