Determining thickness of layer grown on semiconductor substrate comprises forming periodic structure on surface of substrate, carrying out selective epitaxial growth, and carrying out scatterometric process

摘要

Determining the layer thickness (h) of a layer (10) epitaxially grown on a semiconductor substrate (1) comprises forming a periodic structure on a surface of the substrate with protrusions (5') and intermediate chambers (5''), carrying out selective epitaxial growth to deposit the layer in the intermediate chambers, and carrying out a scatterometric process to determine the layer thickness of the layer.