Field-effect transistor, complementary field-effect transistor, and method of manufacturing field-effect transistor

摘要

An objective of this invention is to improve an ON-state current of a field-effect transistor. ;For this purpose, on a single-crystal silicon substrate 101 having a {100} plane as a principal surface are formed a gate electrode 107 extending substantially in a 010 crystal axis direction of the single-crystal silicon or an axis direction equivalent to the 010 crystal axis direction, and in both sides of the gate electrode 107, source/drain regions 129 on the surface of the single-crystal silicon substrate 101. On the surface of the single-crystal silicon substrate 101 in a region directly below the gate electrode 107 are formed a principal surface and an inclined surface 133 oblique to the principal surface along the extension direction of the gate electrode 107.