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Semi-custom-made semiconductor integrated circuit device, method for customization and method for redesign

机译:半定制半导体集成电路器件,定制方法和重新设计方法

摘要

An ASIC includes a function layer formed with plural universal logic cells, a common layer formed with conductive strips connected to the universal logic cells and common to other ASICs and a customized layer having at least two metallization layers assigned to conductive strips extending in certain directions parallel to one another and other conductive strips extending in perpendicular directions to the certain directions, respectively, and an inter-layered insulating layer formed with conductive plugs selectively connected between the conductive strips and the other conductive strips, wherein the conductive strips have respective values of length such that the conductive plugs are located on both ends thereof, whereby the conductive strips, other conductive strips and the conductive plugs form plural signal paths reduced in total contact resistance and parasitic capacitance.
机译:ASIC包括由多个通用逻辑单元形成的功能层,由连接至通用逻辑单元并与其他ASIC通用的导电条形成的公共层以及具有至少两个金属化层的定制层,该金属化层分配给在某些方向上平行延伸的导电条导电层彼此之间以及在垂直于特定方向的方向上延伸的其他导电条之间形成有层间绝缘层,该层间绝缘层形成有选择性地连接在导电条和其他导电条之间的导电塞,其中,导电条具有各自的长度值因此,导电插头位于其两端,从而导电条,其他导电条和导电插头形成总接触电阻和寄生电容减小的多个信号路径。

著录项

  • 公开/公告号US7047514B2

    专利类型

  • 公开/公告日2006-05-16

    原文格式PDF

  • 申请/专利权人 MASAHARU MIZUNO;NAOTAKA MAEDA;

    申请/专利号US20020114038

  • 发明设计人 MASAHARU MIZUNO;NAOTAKA MAEDA;

    申请日2002-04-03

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 21:43:11

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