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Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate
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机译:使蓝宝石衬底上的氮化物III-V族化合物半导体层结晶的方法
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摘要
To improve crystallographic property of a nitride III-V compound semiconductor layer grown on a sapphire substrate, a plurality of recesses are made on a major surface of the sapphire substrate, and the nitride III-V compound semiconductor layer is grown thereon. At least a part of the inner surface of each recess makes an angle not less than 10 degrees with respect to the major surface of the sapphire substrate. The recesses are buried with nitride III-V compound semiconductor crystal having a higher Al composition ratio than the nitride III-V compound semiconductor layer, such as AlxGa1-xN crystal whose Al composition ratio x is 0.2 or more, for example. Each recess has a depth not less than 25 nm and a width not less than 30 nm. The recesses may be made either upon thermal cleaning of the sapphire substrate or by using lithography and etching, thermal etching, or the like.
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机译:为了改善在蓝宝石衬底上生长的氮化物III-V族化合物半导体层的结晶学特性,在蓝宝石衬底的主表面上形成多个凹部,并在其上生长氮化物III-V族化合物半导体层。每个凹槽的内表面的至少一部分相对于蓝宝石衬底的主表面成不小于10度的角度。凹部被Al x Sub> Ga 1-x Sub>之类的Al组成比氮化物III-V化合物半导体层高的氮化物III-V化合物半导体晶体掩埋。 Al组成比x为0.2以上的N晶体。每个凹槽的深度不小于25nm,宽度不小于30nm。可以在对蓝宝石衬底进行热清洁时或者通过使用光刻和蚀刻,热蚀刻等来制造凹部。
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