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Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof

机译:使用相变二极管存储单元的超高密度存储装置及其制造方法

摘要

An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure, the second layer comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, comprises depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.
机译:一种使用相变二极管存储单元的超高密度数据存储设备,该设备具有多个用于定向有向能量束的发射器,一个用于形成多个数据存储单元的层以及一个用于检测存储器的存储状态或数据状态的分层二极管结构所述存储单元,其中,所述装置包括:相变数据存储层,其能够响应于来自发射器的光束而改变状态;以及第二层,其在所述层状二极管结构中形成一层,所述第二层包括含铜的材料,铟和硒。一种形成用于相变数据存储阵列的二极管结构的方法,该结构具有适于形成多个数据存储单元二极管的多个薄膜层,该方法包括在基板上沉积CuInSe材料的第一二极管层并沉积第二二极管层第一二极管层上的相变材料的数量。

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