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DEVICE PACKAGES HAVING A III-NITRIDE BASED POWER SEMICONDUCTOR DEVICE
DEVICE PACKAGES HAVING A III-NITRIDE BASED POWER SEMICONDUCTOR DEVICE
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机译:具有基于III氮化物的功率半导体器件的器件封装
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摘要
A semiconductor device package includes a die pad, a substrate disposed on the die pad, and a III-nitride based semiconductor device disposed on the substrate. The device package may also include a second semiconductor device disposed on the die pad or the substrate, which device may be electrically connected to the III-nitride based device to form a circuit.
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