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WAFER SUPPORTING METHOD AND WAFER HOLDER FOR HIGH-TEMPERATURE SEMICONDUCTOR-MANUFACTURE-LINE

机译:高温半导体制造线的晶圆支撑方法和晶圆保持器

摘要

In the present invention, in the large-diameter wafer in a semiconductor manufacturing apparatus for high temperature treatment process, forming a fluid at high temperature process and by having a combined silicon carbide quartz and high temperature in the process is forming a support holder, that suppress the slip of the semiconductor manufacturing equipment and wafer holder for wafer support method in which a high temperature process for semiconductor manufacturing processes and improve productivity of hot process equipment is disclosed. ; The invention in fluid contact with the quartz as it changes in a high temperature process in that the upper line of the holder of a ceramic body 10, the support 12 to maintain the rigidity at a high temperature for this process body 14 and having a bottom portion contacting the wafer with a support point of the contact body of silicon carbide with a quartz wafer 100 at the contact position of the wafer by a high temperature process in addition to the flow of the high temperature also avoids the direct contact of the The method provides a wafer support and the holder for the semiconductor manufacturing process to maintain a high temperature process. ; Here, the wafer support member is a physical property of the contact with the heat of the high temperature zone of the flow changes in the process to heat contact body includes a supporting section and a fluid, shape euroneun by providing contact body 12 with the ring-like contact support, and characterized by a concentric circle in its support position, the wafer due to the contact body 12, as another embodiment of the quartz 100, the support is characterized by performing a three-point support or four point support radially concentric according to the support position.
机译:在本发明中,在用于高温处理工艺的半导体制造设备中的大直径晶片中,在高温工艺中形成流体并且通过在该工艺中具有碳化硅石英和高温的组合来形成支撑架,即公开了一种用于半导体支撑工艺的半导体制造工艺和用于晶片支撑方法的晶片保持器,其公开了用于半导体制造工艺的高温工艺并提高了热加工设备的生产率。 ;本发明在高温过程中随着石英的变化而与石英流体接触,这是因为陶瓷体10的保持器的上线,用于对该过程体14在高温下保持刚性的支撑件12并且具有底部。通过高温工艺在晶片的接触位置处使晶片与碳化硅与石英晶片100的接触体的支撑点接触的部分除了高温的流动之外,还避免了该方法的直接接触。提供用于半导体制造过程的晶片支撑件和保持器,以保持高温过程。 ;在此,晶片支撑部件的物理性质是与热的高温区域接触的过程中的流动变化的热,以通过使接触体12具有环而使接触体包括支撑部和流体状的欧罗尼热。状的接触支撑,其特征在于在其支撑位置有一个同心圆,晶片由于接触体12而作为石英100的另一个实施例,该支撑的特征在于执行了三点支撑或四点支撑径向同心根据支撑位置。

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