METHOD FOR FABRICATING III-V NITRIDE COMPOUND FLIP-CHIP SEMICONDUCTOR LIGHT-EMITTING DEVICE USING DRY ETCHING ON THE SUBSTRATE TO IMPROVE THE EXTRACTION EFFICIENCY

摘要

The present invention on the transparent substrate , n-AlxGayInzN (0 x, y, z 1, x + y + z = 1) and a lower contact layer made of p-AlxGayInzN (0 x, y, z 1, x + y + z = 1) comprising a top contact layer is formed , and the lower contact layer between the top contact layer AlxGayInzN (0 x, y, z 1, x + y + z = 1) as the active layer is made of light-emitting semiconductor light-emitting device is interposed relates to a method for producing a -V nitride-based flip-chip structure composed of , is in contact with air and characterized in that the winding through the dry etching to give the lower surface of the transparent substrate . According to the present invention, the air and the photon by the curvature of the surface in contact with the substrate can be satisfied in terms of the probability that a certain critical angle , that is , because the probability that photons can escape to the outside increases the external photon efficiency is increased.