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Method for fabricating ?-? nitride compound flip-chip semiconductor light-emitting device using dry etching on the substrate to improve the extraction efficiency
Method for fabricating ?-? nitride compound flip-chip semiconductor light-emitting device using dry etching on the substrate to improve the extraction efficiency
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机译:制造α-β的方法氮化物化合物倒装芯片半导体发光器件,通过在基板上进行干法刻蚀来提高提取效率
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摘要
The present invention on the transparent substrate , n-AlxGayInzN (0 x, y, z 1, x + y + z = 1) and a lower contact layer made of p-AlxGayInzN (0 x, y, z 1, x + y + z = 1) comprising a top contact layer is formed , and the lower contact layer between the top contact layer AlxGayInzN (0 x, y, z 1, x + y + z = 1) as the active layer is made of light-emitting semiconductor light-emitting device is interposed relates to a method for producing a -V nitride-based flip-chip structure composed of , is in contact with air and characterized in that the winding through the dry etching to give the lower surface of the transparent substrate . According to the present invention, the air and the photon by the curvature of the surface in contact with the substrate can be satisfied in terms of the probability that a certain critical angle , that is , because the probability that photons can escape to the outside increases the external photon efficiency is increased.
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机译:在透明基板上的本发明,n-AlxGayInzN(0 x,y,z 1,x + y + z = 1)和由p-AlxGayInzN(0 x,y,z 1,x + y)制成的下接触层形成包括顶部接触层的+ z = 1),并且作为有源层的顶部接触层AlxGayInzN(0 x,y,z 1,x + y + z = 1)之间的下接触层由光-发光半导体发光器件所涉及的是一种制造基于-V氮化物的倒装芯片结构的方法,它与空气接触,其特征在于通过干法蚀刻绕制以给出透明的下表面基质 。根据本发明,可以通过一定临界角的概率,即因为光子可以逸出到外部的概率增加,来满足与基板接触的表面的曲率所需要的空气和光子。外部光子效率提高。
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