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SILICON OPTOELECTRONIC DEVICE MANUFACTURING METHOD AND SILICON OPTOELECTRONIC DEVICE MANUFACTURED BY THEREOF AND IMAGE INPUT AND/OR OUTPUT APPARATUS APPLIED IT
SILICON OPTOELECTRONIC DEVICE MANUFACTURING METHOD AND SILICON OPTOELECTRONIC DEVICE MANUFACTURED BY THEREOF AND IMAGE INPUT AND/OR OUTPUT APPARATUS APPLIED IT
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机译:硅光电装置的制造方法以及由其制造的硅光电装置以及应用了图像输入和/或输出装置的硅光电装置
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摘要
A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based substrate; forming a polysilicon having a predetermined depth at one or more predetermined regions of a surface of the substrate in order to form a microdefect flection pattern having a desired microcavity length; oxidizing the surface of the substrate where the polysilicon is formed for forming a silicon oxidation layer on the substrate and forming a microdefect flection pattern having a desired microcavity length at an interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by a difference between an oxidation rate of the polysilicon and an oxidation rate of a material of the substrate during formation of the silicon oxidation layer; exposing the microdefect flection pattern by etching a region of the silicon oxidation layer where the polysilicon is formed; and forming a doping region by doping the exposed microdefect flection pattern in a type opposite to a type of the substrate.
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