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DIELECTRIC ETCH METHOD WITH HIGH SOURCE AND LOW BOMBARDMENT PLASMA PROVIDING HIGH ETCH RATES
DIELECTRIC ETCH METHOD WITH HIGH SOURCE AND LOW BOMBARDMENT PLASMA PROVIDING HIGH ETCH RATES
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机译:提供高蚀刻速率的高源低轰击等离子体介电蚀刻方法
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摘要
In at least some embodiments, the present invention is a plasma etching method which includes applying a gas mixture comprising CF 4 , N 2 and Ar and forming a high density and low bombardment energy plasma. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The gas mixture can further include H 2 , NH 3 , a hydrofluorocarbon gas and/or a fluorocarbon gas. The hydrofluorocarbon gas can include CH 2 F 2 , CH 3 F; and/or CHF 3 . The fluorocarbon gas can include C 4 F 8 , C 4 F 6 and/or C 5 F 8 .
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机译:在至少一些实施例中,本发明是一种等离子体蚀刻方法,其包括施加包括CF 4,N 2和Ar的气体混合物并形成高密度和低轰击能量的等离子体。通过使用高源和低偏置功率设置来形成高密度和低轰击能量等离子体。气体混合物可以进一步包括H 2,NH 3,氢氟烃气体和/或碳氟化合物气体。氢氟烃气体可包括CH 2 F 2,CH 3 F;和和/或CHF 3。碳氟化合物气体可包括C 4 F 8,C 4 F 6和/或C 5 F 8。
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