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Organosilane Downstream Plasma On Ultra Low-k Dielectrics:Comparing Repair With Post Etch Treatment

机译：超低k电介质上的有机硅烷下游等离子体：维修与蚀刻后处理的比较

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Calvo Jesús; Steinke Philipp; Wislicenus Marcus; Gerlich Lukas; Seidel Robert; Clauss Ellen; Uhlig Benjamin;
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年度 2016
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1. Investigation of plasma etch damage to porous oxycarbosilane ultra low-k dielectric [J] . Bruce R.L., Engelmann S., Purushothaman S., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第26期

机译：等离子体蚀刻对多孔碳硅烷超低k电介质的破坏研究
2. Evaluation of Post Etch Residue Cleaning Solutions for the Removal of Tin Hardmask after Dry Etch of Low-K Dielectric Materials on 45 nm Pitch Interconnects [J] . Makonnen Payne, Steve Lippy, Ruben Lieten, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：在45 nm间距互连线上干蚀刻低K介电材料后去除锡硬掩模的蚀刻后残留清洗液的评估
3. Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2) [J] . F. Ito, H. Shobha, M. Tagami, Microelectronic Engineering . 2012,第Apra期

机译：有效的铜表面预处理，用于具有高耐等离子体性的超低介电常数（k = 2.2）的高可靠性22 nm节点铜双镶嵌互连
4. Optimization of PET (Post Etch Treatment) steps to enlarge queue time and decrease defect counts in Ultra low-k material AIO (all in one) etch processes [C] . Xu Zhang, Chen-Guang Gai, Jun Huang China Semiconductor Technology International Conference . 2015

机译：优化PET（蚀刻后处理）步骤，以增加排队时间并减少超低k材料AIO（多合一）蚀刻工艺中的缺陷数
5. Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure. [D] . Sa, Yoonki. 2015

机译：用于高级互连的多孔低k电介质的机械可靠性：多孔低k电介质的不稳定性机理及其通过惰性等离子体引发的骨架结构再聚合的介导研究。
6. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects [O] . Hideharu Shimizu, Shuji Nagano, Akira Uedono, 2013

机译：用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
7. Surface Analysis of TMCTS-Based SiOC(H) Low-k Dielectrics in Post-Etch Strip of ACL Hardmask [O] . Min Kyu Park, Wan Soo Song, Min Ho Kim, 2021

机译：ACL硬掩模后蚀刻条带中TMCTS的SIOC（H）低k电介质的表面分析

Organosilane Downstream Plasma On Ultra Low-k Dielectrics:Comparing Repair With Post Etch Treatment

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