The present invention, relates to a method for producing a TFT substrate for a display device, the insulating substrate forming a gate wiring including a gate line and associated with the gate electrode; Forming a gate insulating film covering the gate wire and; Forming a semiconductor layer pattern on the gate insulating film; Forming an ohmic contact layer pattern on the semiconductor layer pattern; Are separated from each other are formed on the ohmic contact layer may include forming a data line including a source electrode and a drain electrode and made of the same layer, the data line connected with the source electrode, the separation of the source electrode and the drain electrode is made through a photolithography process using a photoresist pattern, forming a pattern of the semiconductor layer and the ohmic contact layer pattern is characterized in that it is formed through a dry etching process using an etching gas containing oxygen molecules in a predetermined amount. Accordingly, in the process of forming the ohmic contact layer pattern and the semiconductor layer pattern is possible to simplify the overall manufacturing process, by removing the photosensitive film on the channel region with a thin film transistor.
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