method of the hafnium silicate gate dielectric film for semiconductor devices

摘要

PURPOSE: A method for fabricating a hafnium silicate gate insulation layer of a semiconductor device is provided to improve adaptability of a hafnium silicate thin film used as a gate insulation layer by rapidly and repeatedly forming a hafnium silicate thin film of a desired composition. CONSTITUTION: Vapor pressure of compound raw material gas of silicon alkoxid, hafnium halide or hafnium amido is controlled to be 0.1-2 torr at the pressure of a reactor of 0.1-2 torr, so that the raw material gas comes in contact with a substrate heated to 250-500 deg.C to chemically deposit an atomic layer.