METHOD FOR FORMING THIN FILM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO FORM HAFNIUM SILICATE LAYER THAT DOESN'T CAUSE OUTFLOW OF BORON

摘要

PROBLEM TO BE SOLVED: To prevent boron from bursting through by releasing hydrogen in a hafnium silicate film by performing high temperature annealing at a temperature where the film does not cause phase separation in a nitrogen atmosphere.;SOLUTION: The forming method of a thin film comprises the processes of: forming a hafnium silicate film 12 on a substrate 11 using an atom layer deposition method; and performing a heat treatment of the hafnium silicate film 12 at a heat treatment temperature above a temperature where hydrogen in the hafnium silicate film 12 is released, and below a temperature where the hafnium silicate film 12 does not cause the phase separation. The manufacturing method of a semiconductor device forms a gate insulating film using the forming method of a thin film.;COPYRIGHT: (C)2005,JPO&NCIPI