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METHOD FOR FABRICATING HAFNIUM SILICATE GATE INSULATION LAYER OF SEMICONDUCTOR DEVICE TO IMPROVE ADAPTABILITY OF HAFNIUM SILICATE THIN FILM
METHOD FOR FABRICATING HAFNIUM SILICATE GATE INSULATION LAYER OF SEMICONDUCTOR DEVICE TO IMPROVE ADAPTABILITY OF HAFNIUM SILICATE THIN FILM
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机译:制造半导体器件的硅酸HA门绝缘层以提高硅酸HA薄膜的适应性的方法
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摘要
PURPOSE: A method for fabricating a hafnium silicate gate insulation layer of a semiconductor device is provided to improve adaptability of a hafnium silicate thin film used as a gate insulation layer by rapidly and repeatedly forming a hafnium silicate thin film of a desired composition. CONSTITUTION: Vapor pressure of compound raw material gas of silicon alkoxid, hafnium halide or hafnium amido is controlled to be 0.1-2 torr at the pressure of a reactor of 0.1-2 torr, so that the raw material gas comes in contact with a substrate heated to 250-500 deg.C to chemically deposit an atomic layer.
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