P-TYPE GaN HAVING HIGH ELECTRIC CONDUCTIVITY AND LOW OHMIC CONTACT RESISTANCE AND METHOD FOR PREPARING THE SAME

摘要

the present invention is a p-type GaN layer grown upon the p-type dopant and the doping with Al by Al including p-type GaN layer and a method for producing characterized in that it and to provide a GaN-based device including a p-type GaN layer of the present invention . If the p-type GaN layer of the present invention is excellent in electrical conductivity , and the like used in the production of an ohmic contact resistance is small , because the light-emitting diode or laser diode can reduce the series resistance of the device .