Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors

摘要

Disclosed are an epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors and a method for growing such a structure. A very high density of p-type doped GaAs or p-type graded Al_xGa_1−xAs (0x≦1) is formed between an ohmic metal and a p-type GaN and subjected to crystal growth. The doped p-type GaAs or graded p-type Al_xGa_1−xAs reduces the potential barrier formed in the p-type GaN, thus significantly reducing the ohmic resistance. This structure can be applied for the improvement in the power efficiency and function of GaN-based optical devices and ultra-speed electronic devices.