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SEMICONDUCTOR DEVICE WITH SOLID PHASE EPITAXY SILICON BY DOUBLE LAYER FOR PAD PLUG AND METHOD FOR FABRICATING THE SAME
SEMICONDUCTOR DEVICE WITH SOLID PHASE EPITAXY SILICON BY DOUBLE LAYER FOR PAD PLUG AND METHOD FOR FABRICATING THE SAME
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机译:具有用于填塞的双层固相表位硅的半导体器件及其制造方法
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摘要
SUMMARY OF THE INVENTION The present invention provides a semiconductor device and a method of manufacturing the same, in which a plug material having a good breakdown voltage characteristics and easy to shallow junctions and a low resistance value is applied. The contact plug forming method of the present invention provides a bonding layer of a semiconductor substrate. Forming a contact hole exposing the contact hole, depositing a relatively low concentration of a first solid phase epitaxy (SPE) silicon film along the surface of the contact hole, and a relatively high concentration of the second SPE silicon on the first SPE silicon film Depositing a film, etching the deposited first and second SPE silicon films so that only a pad plug remains, and forming a metal plug on the first and second SPE silicon films in the contact hole; The invention improves the margin of semiconductor device design and keeps device characteristics stable, reduces contact resistance, and improves device reliability and yield. It can be effective.;Cell Contact, SPE, Plug, Epitaxial Silicon
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