Tunneling metal - semiconductor devices with adjustable barrier height and width,fabricated with GaAs molecular layer epitaxy and W CVD

摘要

The advantage of a very thin mixed layer at the interface of W deposited from W(CO)_6 on GaAs,was exploited for fabrication of tunneling metalsemiconductor diodes.The effective potential barrier height and width can be adjusted with the thickness and dopant concentration in the thin layer below W.The W/p~++/n~++ diodes with 60-80 A p~++ layer operate with electrons tunneling through the depleted p~++ layer.The W/n~++/~-/n diode works like a series connection of a tunneling contact and a Schottky barrier diode with the effective barrier height controlled in a wide range.These structures,fabricated with molecular layer epitaxy,can find application as building blocks of tunneling static induction transistors (SIT) and TUNNETT diodes and as low voltage drop GaAs diodes.