SEMICONDUCTOR DEVICE WITH SOLID PHASE EPITAXY SILICON BY DOUBLE LAYER FOR PAD PLUG AND METHOD FOR FABRICATING THE SAME

摘要

SUMMARY OF THE INVENTION The present invention provides a semiconductor device and a method of manufacturing the same, in which a plug material having a good breakdown voltage characteristics and easy to shallow junctions and a low resistance value is applied. The contact plug forming method of the present invention provides a bonding layer of a semiconductor substrate. Forming a contact hole exposing the contact hole, depositing a relatively low concentration of a first solid phase epitaxy (SPE) silicon film along the surface of the contact hole, and a relatively high concentration of the second SPE silicon on the first SPE silicon film Depositing a film, etching the deposited first and second SPE silicon films so that only a pad plug remains, and forming a metal plug on the first and second SPE silicon films in the contact hole; The invention improves the margin of semiconductor device design and keeps device characteristics stable, reduces contact resistance, and improves device reliability and yield. It can be effective.;Cell Contact, SPE, Plug, Epitaxial Silicon