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Negative drop voltage generator for use in semiconductor memory device and control method for generating negative drop voltage

机译:用于半导体存储器件的负压降发生器和产生负压降的控制方法

摘要

semiconductor memory device to produce a level of the negative voltage required in accordance with the operation mode in the semiconductor memory device of the best negative voltage generating device and a control method of a negative voltage generation is described. Negative voltage generating device of such a semiconductor memory device and a negative voltage generator having first and second output terminals ; It is connected between the first output and the second output terminal of the negative voltage generator in response to an applied control signal , so that the negative voltage is generated in each of the different levels through the first and second output terminals to each other or at the same level by a voltage separation / integration unit for generating more stable so that the operation mode is generated according to the effective negative voltage is achieved.
机译:描述了根据最佳负电压产生装置的半导体存储装置中的操作模式产生所需的负电压电平的半导体存储装置,以及负电压产生的控制方法。这种半导体存储装置的负电压产生装置和具有第一和第二输出端子的负电压产生器。响应于所施加的控制信号,它被连接在负电压发生器的第一输出和第二输出端子之间,从而通过第一和第二输出端子彼此或以不同的电平在每个不同的电平中产生负电压。通过电压分离/积分单元产生相同电平的电压,以便更稳定地产生,从而根据有效的负电压产生工作模式。

著录项

  • 公开/公告号KR100610005B1

    专利类型

  • 公开/公告日2006-08-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20030058576

  • 发明设计人 최종현;서영훈;

    申请日2003-08-25

  • 分类号G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:16

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