首页> 外国专利> NEGATIVE DROP VOLTAGE GENERATOR AND CONTROL METHOD FOR GENERATING NEGATIVE DROP VOLTAGE WITH VOLTAGE DIVIDING/UNITING PART FOR GENERATING BULK BIAS VOLTAGE AND WORD LINE DRIVING NEGATIVE VOLTAGE IN DIFFERENT LEVEL WITH EACH OTHER IN TEST MODE

NEGATIVE DROP VOLTAGE GENERATOR AND CONTROL METHOD FOR GENERATING NEGATIVE DROP VOLTAGE WITH VOLTAGE DIVIDING/UNITING PART FOR GENERATING BULK BIAS VOLTAGE AND WORD LINE DRIVING NEGATIVE VOLTAGE IN DIFFERENT LEVEL WITH EACH OTHER IN TEST MODE

机译:在测试模式下用负负分压产生器和负分压产生器的负分压产生器和控制方法,负负分压和组合部分用于产生大容量偏置电压和字线驱动不同水平的负电压

摘要

PURPOSE: A negative drop voltage generator of a semiconductor memory device and a control method for generating negative drop voltage are provided to generate different level of a negative drop voltage in a test mode, and generate the same level of a negative drop voltage in a normal mode. CONSTITUTION: A negative drop voltage generator of a semiconductor memory device comprises a negative voltage generator(50) having a first output terminal(VBB1) and a second output terminal(VBB2); a voltage dividing/uniting part(100) consisting of a NMOS transistor(NM1) between the first output terminal(VBB1) and the second output terminal(VBB2), for controlling the level of the negative voltage to the same level in a normal mode by being turned on in response to a control signal(MRS), and for controlling the level of the negative voltage to a different level in a test mode by being turned off in response to the control signal(MRS).
机译:目的:提供一种半导体存储器件的负压降产生器和用于产生负压降的控制方法,以在测试模式下产生不同电平的负压降电压,并在正常情况下产生相同电平的负压降电压。模式。构成:一种半导体存储器件的负压发生器,包括:负电压发生器(50),具有第一输出端(VBB1)和第二输出端(VBB2);在第一输出端(VBB1)和第二输出端(VBB2)之间由NMOS晶体管(NM1)组成的分压/结合部分(100),用于在正常模式下将负电压的电平控制为相同的电平通过响应于控制信号(MRS)被接通,并且用于通过在响应于控制信号(MRS)而被关断的情况下在测试模式下将负电压的电平控制为不同的电平。

著录项

  • 公开/公告号KR20050021033A

    专利类型

  • 公开/公告日2005-03-07

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030058576

  • 发明设计人 CHOI JONG HYUN;SEO YOUNG HUN;

    申请日2003-08-25

  • 分类号G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:48

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