METHOD OF FABRICATING NITRIDE TYPE COMPOUND LAYER, GAN SUBSTRATE AND VERTICAL STRUCTURE NITRIDE TYPE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method for fabricating a nitride-based compound layer is provided to recycle an expensive GaN substrate by separating a GaN substrate without damage by a wet etch process. A mask layer(22) is formed on a GaN substrate(21), having a predetermined pattern for exposing a part of the upper surface of the GaN substrate. A buffer layer(23) is formed on the upper surface of the exposed GaN substrate, made of a material having a difference of a lattice constant of 10 percent or lower with respect to GaN. After a nitride-based compound layer(24) is laterally grown from the upper surface of the buffer layer to the upper surface of the mask layer, a predetermined thickness of a nitride-based compound layer is vertically grown. The mask layer and the buffer layer are eliminated by a wet etch process to separate the GaN substrate and the nitride-based compound layer from each other. The buffer layer is made of at least one material selected from a group composed of ZnO, Ga2O3 and ZrB2. The mask layer is a silicon oxide layer or a silicon nitride layer.