首页> 外文会议>International Electron Devices Meeting >A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI
【24h】

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

机译:一种新型氮化硅发光晶体管(SINLET):SONOS型三端电致发光器件的光/电性能,用于ULSI中的光学通信

获取原文

摘要

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm{sup}2 is demonstrated for display and optical communication purposes.
机译:首次提出了一种新型的氮化硅的发光晶体管(SINLET)。该三端电致发光器件使用Sonos型器件结构,其过程兼容标准CMOS器件。光子由Fowler-Nordheim电子(FN-E)隧道喷射,带对带隧道诱导的热孔(BTBT-HH)注射的带状带隧道喷射,以及通过氮化物疏水阀的载体散射/捕获/重组。具有有效装置面积为0.616μm{sup} 2的Sinlet用于显示和光学通信目的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号