A method for producing a light-emitting semiconductor device with in the shaping of an active current diffusion layer of a changed growth rate

摘要

A method for producing a light-emitting semiconductor device comprising the steps of:– The formation of a lower cover layer on a compound semiconductor substrate,– Forming an active layer on the lower cover layer,– Forming an upper cover layer on the active layer, so that a light-emission area, together with the lower cover layer and the active layer is formed,– Forming an intermediate layer on the upper cover layer and– The formation of a current diffusion layer on the intermediate layer,– a grating constant of the intermediate layer between a lattice constants of the upper cover layer and a grating constant of the current diffusion layer and– wherein an absolute value of a grid adaptation factor δa / a between the current diffusion layer and the intermediate layer 0,25% or more,characterized by the,that to form the current diffusion layer initially a first growth rate is set, the less than or equal to 1,0 μm / h is, and then a second growth rate is set, the greater than 1,0 μm / h is.