Ferroelectric RAM memory has ferroelectric memory capacitors above select transistors on a substrate with air gaps to decouple the capacitors

摘要

A ferroelctric RAM memory comprises ferroelectric memory capacitors above a lateral series of select transistors (3) in a substrate (1,2) whose electrodes (14a,b) are connected pairwise laterally and joined to the transistors by vertical plugs (20). Air gaps between transistors in two lateral dimensions mechanically decouple the capacitors. An independent claim is also included for a production process for the above.