A method of repairing damaged low-k dielectric material is disclosed. Plasma-based methods commonly used in the manufacture of semiconductor devices often damage carbon-containing low-k dielectric materials. Upon exposure to moisture, the damaged dielectric material may form silanol groups. In preferred embodiments, a two step approach converts the silanol group into suitable organic groups. The first step involves the use of a halogenating reagent to convert the silanol groups to a silicon halide. The second step involves the use of a derivatization reagent, preferably an organometallic compound, to replace the halide with the appropriate organic group. In a preferred embodiment, the halogenating agent includes thionyl chloride and the organometallic compound includes an alkyllithium, preferably methyllithium. In another preferred embodiment, the organometallic compound comprises a Grignard reagent. Embodiments disclosed herein advantageously allow the manufacturer to construct the density, polarization and ionization characteristics of low-k dielectric material by selective introduction of the organic group.
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