The device has a flash memory and 1995 for programming of the bits of clinical and for the read

摘要

The device has a voltage supply circuit (270) providing high and low voltages to word lines. A voltage supply circuit (240) provides high voltage, during one period, to bit lines conforming to a least significant bit (LSB), to program and read the LSB before another period. The circuit (240) provides low voltage to the bit lines conforming to a most significant bit (MSB) and read LSB at the latter period, to program the MSB. An independent claim is also included for a process for programming the least and most significant bits in cells of a memory during two different programming periods.