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SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR
SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide a silicon-containing photosensitive composition having photosensitivity, that is developable without using a crosslinking agent, and superior in storage stability, a method for producing a thin-film pattern that uses the same, a protective film for an electronic device, a transistor, a color filter, an organic EL element, a gate insulating film and a thin-film transistor.;SOLUTION: The silicon-containing photosensitive composition contains at least one kind of silicon-containing polymer having an SiH group and a compound which generates acid or base, upon irradiation with light rays of or radiation, wherein the silicon-containing polymer comprises a polymer obtained by polymerizing at least one kind of silane compound (A) having three hydrolyzable groups and at least one silane compound (B) having one or two hydrolyzable groups. At least one kind of the silane compound (A) and the silane compound (B) contains a silane compound having an SiH group.;COPYRIGHT: (C)2007,JPO&INPIT
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