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SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR
SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide a silicon-containing photosensitive composition capable of film formation without requiring large and expensive vacuum equipment, and capable of forming a patterned film superior in insulating characteristics, a method for producing a thin-film pattern using the same, a protective film for an electronic device, a transistor, a color filter, an organic EL element, a gate insulating film and a thin-film transistor.;SOLUTION: The silicon-containing photosensitive composition contains a silicon-containing polymer obtained by polymerizing at least one kind of silane compound (A) having four hydrolyzable groups represented by Formula (1): Si(Z)4 (wherein Z represents a hydrolyzable group and a plurality of symbols Z may be the same or different), and a compound which generates an acid or a base, upon irradiation with light rays or radiation.;COPYRIGHT: (C)2007,JPO&INPIT
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