首页> 外国专利> SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR

SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR

机译:含硅的光敏组合物,使用相同的薄膜生产方法,电子设备的保护膜,晶体管,彩色滤光片,有机元素,栅极绝缘膜和薄膜晶体管

摘要

PROBLEM TO BE SOLVED: To provide a silicon-containing photosensitive composition capable of film formation without requiring large and expensive vacuum equipment, and capable of forming a patterned film superior in insulating characteristics, a method for producing a thin-film pattern using the same, a protective film for an electronic device, a transistor, a color filter, an organic EL element, a gate insulating film and a thin-film transistor.;SOLUTION: The silicon-containing photosensitive composition contains a silicon-containing polymer obtained by polymerizing at least one kind of silane compound (A) having four hydrolyzable groups represented by Formula (1): Si(Z)4 (wherein Z represents a hydrolyzable group and a plurality of symbols Z may be the same or different), and a compound which generates an acid or a base, upon irradiation with light rays or radiation.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决问题的方法:提供一种含硅光敏组合物,其能够在不需要大型且昂贵的真空设备的情况下形成膜,并且能够形成绝缘特性优异的图案化膜,一种使用该组合物的薄膜图案的制造方法,电子设备用保护膜,晶体管,彩色滤光片,有机EL元件,栅极绝缘膜和薄膜晶体管。解决方案:含硅光敏组合物包含在室温下聚合得到的含硅聚合物。具有式(1)表示的四个可水解基团的至少一种硅烷化合物(A):Si(Z) 4 (其中Z表示可水解基团,并且多个符号Z可以相同或);以及在光线或辐射照射下会产生酸或碱的化合物。;版权所有:(C)2007,JPO&INPIT

著录项

  • 公开/公告号JP2007248808A

    专利类型

  • 公开/公告日2007-09-27

    原文格式PDF

  • 申请/专利权人 SEKISUI CHEM CO LTD;

    申请/专利号JP20060072211

  • 申请日2006-03-16

  • 分类号G03F7/075;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 21:14:56

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