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SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR
SILICON-CONTAINING PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THIN-FILM PATTERN USING THE SAME, PROTECTIVE FILM FOR ELECTRONIC DEVICE, TRANSISTOR, COLOR FILTER, ORGANIC EL ELEMENT, GATE INSULATING FILM AND THIN-FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide a silicon-containing photosensitive composition having photosensitivity, that is developable without the use of a crosslinking agent, and capable of forming a thin-film pattern superior in denseness, a method for producing a thin film pattern using the same, a protective film for an electronic device, a transistor, a color filter, an organic EL element, a gate insulating film and a thin-film transistor.;SOLUTION: The silicon-containing photosensitive composition contains at least one kind of silicon-containing polymer having an SiH group and a compound which generates an acid or a base upon irradiation with light rays or radiation, wherein the silicon-containing polymer comprises a polymer obtained by polymerizing at least one kind of silane compound (A), having three hydrolyzable groups and at least one silane compound (B) having four hydrolyzable groups. The silane compound (A) contains a silane compound having an SiH group.;COPYRIGHT: (C)2007,JPO&INPIT
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