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Production manner of the conductive organicity numerator thin film, the structure and the thiophene derivative null which possess the conductive organicity numerator

机译:具有导电有机分子的导电有机分子薄膜的生产方式,结构和噻吩衍生物

摘要

PROBLEM TO BE SOLVED: To prepare a conductive thin film of a film thickness in a specified range readily in a large quantity by bringing solution of specified organic silicon compound into contact with a substrate with hydroxyl group in a surface thereof and forming an organic silicon compound molecule thin film in a substrate surface by making the organic silicon compound react to hydroxyl group. ;SOLUTION: Solution of organic silicon compound shown in a formula is brought into contact with a substrate 10 of a region 3 having hydroxyl group in an insulating surface thereof and the organic silicon compound is made to react to hydroxyl group and a thin film of conductive organic silicon compound molecule 20 is formed in a surface of the substrate 10. In the formula, X is conjugate molecule, one of R1, R2 and R3 is a group which forms covalent bond on reacting to hydrogen of hydroxyl group and remaining two of R1, R2 and R3 are a group which does not react to hydrogen of hydroxyl group and R4 and R5 are a group which does not react to hydrogen of hydroxyl group.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过使指定的有机硅化合物的溶液与表面上具有羟基的基板接触并形成有机硅化合物来容易地大量制备膜厚在指定范围内的导电薄膜。通过使有机硅化合物与羟基发生反应,可在基板表面形成大分子的薄膜。 ;解决方案:使式中所示的有机硅化合物的溶液与在其绝缘表面上具有羟基的区域3的基板10接触,并使有机硅化合物与羟基和导电性薄膜反应有机硅化合物分子20形成在基板10的表面中。在该式中,X是共轭分子,R1,R2和R3中的一个是在与羟基的氢反应时形成共价键的基团,并且剩余的R1中的两个,R2和R3是不与羟基的氢反应的基团,R4和R5是不与羟基的氢反应的基团。; COPYRIGHT:(C)2000,JPO

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