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Measuring method of conductivity of the conductive organicity numerator thin film and the structure null which possesses the conductive organicity numerator

机译:导电有机分子薄膜的电导率的测量方法和具有导电有机分子的结构零点

摘要

PROBLEM TO BE SOLVED: To form a molecular thin film of organic silicon compound and to make its conductivity measurable by bringing a specific organic silicon compound into contact with a substrate with an insulation film where a hydroxyl group is formed on the surface and a pair of metal electrodes. ;SOLUTION: The conductive organic molecular thin film can be obtained by forming electrode patterns 21 and 22 on a substrate 10 and then bringing the solution or steam of the organic silicon compound being expressed, for example, by an expression (in the expression, X indicates an alkyl group or a silyl group, one of R1-R3 does a group for forming a covalent bond by reacting with a hydroxyl group, the rest does a group that does not react with the hydroxyl group, R4 does an alkyl group or the like, a and b are positive integers that are equal to 1 or larger). The substrate 10, for example, where a silicon oxide film is formed on the surface part of the silicon substrate is used. A molecular thin film 3 that is composed by an organic molecule 31 or the like and is self-organized is formed between the electrode patterns 21 and 22 due to the reaction between the hydroxyl group and the organic silicon compound being formed on the surface of the oxide film.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过使特定的有机硅化合物与带有绝缘膜的基底接触,使有机硅化合物的分子薄膜与基底接触,该绝缘膜的表面上形成有羟基,并且通过一对绝缘膜形成有机硅化合物的分子电导率,从而解决该问题。金属电极。 ;解决方案:可以通过在基板10上形成电极图案21和22,然后将有机硅化合物的溶液或蒸汽例如通过表达式(在表达式中为X表示烷基或甲硅烷基,R1-R3中的一个是通过与羟基反应形成共价键的基团,其余的是不与羟基反应的基团,R4是烷基或例如,a和b是等于1或更大的正整数)。例如使用基板10,其中在硅基板的表面部分上形成氧化硅膜。通过在电极图案21和22之间形成羟基和有机硅化合物之间的反应,在电极图案21和22之间形成由有机分子31等组成并且自组织的分子薄膜3。氧化膜。; COPYRIGHT:(C)2000,JPO

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