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Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
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机译:具有改善的临界尺寸和蚀刻选择性的原位非晶碳掩模的介电等离子体蚀刻工艺
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摘要
A plasma-enhanced process is performed in a single plasma reactor chamber for etching a thin film layer on a workpiece, using a hard mask layer including an amorphous carbon layer (ACL) overlying the thin film layer and an anti-reflection coating (ARC) overlying the ACL. The process includes etching a pattern in the ARC in accordance with a photoresist mask overlying the ARC, using a plasma produced from a fluorine-containing process gas, and then removing fluorine-containing residue from the reactor chamber and/or workpiece by performing a first transition step by replacing the fluorine-containing process gas with an inert species process gas and maintaining a plasma in the reactor chamber. A pattern is then etched in the ACL using the ARC as an etch mask by replacing the argon process gas with a process gas containing hydrogen while maintaining a plasma in the chamber. Thereafter, hydrogen-containing residue is removed from the reactor and/or from the chamber by performing a flush step by replacing the hydrogen-containing process gas with argon gas and maintaining a plasma in the chamber. The process continues with etching a pattern in the thin film layer using the ACL as a hard mask by replacing the argon gas in the chamber with a species capable of etching the thin film layer.
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