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Dynamic over-voltage protection scheme for integrated-circuit devices

机译:集成电路器件的动态过压保护方案

摘要

An integrated circuit having a transistor device and over-voltage protection circuitry. The transistor device is implemented in a technology having a specified operating-voltage range, the transistor device having gate, drain, source, and tub nodes, and the specified operating-voltage range having a specified maximum voltage. The over-voltage protection circuitry is adapted to apply gate and tub voltages to the gate and tub nodes, respectively. If at least one channel voltage applied to at least one of the drain and source nodes exceeds the specified maximum voltage, then the over-voltage protection circuitry controls at least one of the gate voltage and the tub voltage to inhibit one or more adverse effects to the transistor device.
机译:一种具有晶体管器件和过压保护电路的集成电路。该晶体管器件以具有指定工作电压范围的技术来实现,该晶体管器件具有栅极,漏极,源极和桶节点,并且该指定工作电压范围具有指定的最大电压。过电压保护电路适于分别将栅极和桶电压施加到栅极和桶节点。如果施加到漏极和源极节点中至少一个的至少一个沟道电压超过了规定的最大电压,则过压保护电路将控制栅极电压和桶形电压中的至少一个,以抑制一个或多个对栅极电压的不利影响。晶体管器件。

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