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Bi-crystal heterostructure electronic isolator

机译:双晶异质结构电子隔离器

摘要

A bi-crystal heterostructure includes a first, substantially uniaxial, crystal layer; a second, substantially uniaxial, crystal layer positioned adjacent to the first crystal layer, and wherein the first and second crystal layers have mutually opposite rotations of their respective principal cross-sectional axes of a degree sufficient to impart negative refractivity in the heterostructure; a conductive metal strip positioned between the crystal layers and having a principal longitudinal axis sufficiently aligned with an unrotated principal axis of each of the first and second crystal layers to permit unidirectional electromagnetic wave propagation in the conductive metal strip; and a lossy metal strip positioned between the crystal layers and having a principal axis positioned substantially parallel to the principal axis of the conductive metal strip. Alternatively, one or both of the crystal layers can be replaced with a ferroelectric crystal with an associated static bias voltage source for imparting the uniaxial property to achieve the said crystal layers mutually opposite axes rotations. The conductive metal strip when wired with connectors at each end and positioned in an electrical circuit, e.g. an rf transmitting system, operates as an electrical isolator, substantially blocking signals in one direction while transmitting in the opposite direction.
机译:双晶异质结构包括基本为单轴的第一晶体层;以及第一晶体层。第二个基本单轴的晶体层,位于与第一晶体层相邻的位置,并且其中第一和第二晶体层的各自主截面轴具有彼此相反的旋转,旋转的程度足以在异质结构中赋予负折射率。导电金属带,位于所述晶体层之间,并且其主纵轴与所述第一和第二晶体层中的每一个的未旋转主轴充分对准,以允许单向电磁波在所述导电金属带中传播;有损金属带,其位于所述晶体层之间,并且其主轴线基本平行于所述导电金属带的主轴线。可替代地,可以用具有相关联的静态偏置电压源的铁电晶体来替换一个或两个晶体层,以赋予单轴特性以实现所述晶体层彼此相反的轴旋转。导电金属带在两端分别与连接器连线并置于电路中时,例如射频发射系统作为电隔离器工作,基本上在一个方向上阻挡信号,而在相反方向上发射。

著录项

  • 公开/公告号US7253696B2

    专利类型

  • 公开/公告日2007-08-07

    原文格式PDF

  • 申请/专利权人 CLIFFORD M. KROWNE;

    申请/专利号US20050086732

  • 发明设计人 CLIFFORD M. KROWNE;

    申请日2005-03-17

  • 分类号H01P1/32;H01P1/36;

  • 国家 US

  • 入库时间 2022-08-21 21:00:38

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