According to the invention, an insulation layer formed on a semiconductor substrate is provided with a capacitance structure (K). Said capacitance structure (K) comprises at least one first partial structure (T1a) which has a metallic latticed region (G1a to G1c) and electroconductive regions (P1a to P1c) which are arranged in the recesses of the latticed region (G1a to G1c). Said latticed region (G1a to G1c) is connected to a first connection line and the electroconductive regions (P1a to P1c) are connected to a second connection line.
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