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QUALITY ESTIMATING METHOD FOR CROPPING A SINGLE CRYSTAL INGOT

机译:裁剪单晶锭的质量估算方法

摘要

A quality estimating method for cropping a single crystal ingot is provided to improve excess of a sampling number by making a sampling rule for determining a cropping position and a sampling position and the sampling number of the single crystal ingots. An input process is performed to input basic information for determining a cropping position, a sampling position, and a prime position(a). A setting process is performed to set the cropping position, the sampling position, and the prime position according to the basic information(b). A monitoring, analyzing, and storing process is performed to monitor an ingot growth process and analyze and store an X factor(c). A confirmation process is performed to confirm the cropping position and the sampling position by using the cropping position and the sampling position(d).
机译:提供一种用于裁剪单晶锭的质量估计方法,以通过制定用于确定单晶锭的裁剪位置和采样位置以及采样数的采样规则来改善采样数的过量。进行输入处理以输入用于确定裁切位置,采样位置和主要位置(a)的基本信息。进行设置处理以根据基本信息(b)设置裁切位置,采样位置和主要位置。执行监视,分析和存储过程以监视锭生长过程并分析和存储X因子(c)。通过使用裁切位置和采样位置(d)执行确认处理以确认裁切位置和采样位置。

著录项

  • 公开/公告号KR20060130415A

    专利类型

  • 公开/公告日2006-12-19

    原文格式PDF

  • 申请/专利权人 SILTRON INC.;

    申请/专利号KR20050051082

  • 发明设计人 KIM JIN GEUN;KIM YU JEON;CHO HYON JONG;

    申请日2005-06-14

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-21 20:42:14

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