Method for Crystallizing Amorphous Semiconductor Thin Film by Epitaxy Growth Using Non-metal Seed and Method for Fabricating Poly Crystalline Thin Film Transistor

摘要

The present invention can be made a thin film transistor of excellent properties to achieve the crystallization of the amorphous semiconductor thin-film without metal contamination of the polycrystalline semiconductor thin film on the epitaxial growth Sikkim using a non-metallic seed without using a crystallization-inducing metal in as to crystallize the amorphous silicon method of crystallizing an amorphous semiconductor thin film, and that a method of producing a polycrystalline thin film transistor using the same. ; The present invention includes the steps of forming a pair of non-metallic seed for inducing the crystallization of the amorphous semiconductor thin film with a predetermined distance on the transparent insulating substrate; Depositing an amorphous semiconductor thin film on the entire surface of the substrate; Heat treatment to the substrate is characterized in that the step consists of crystallizing the amorphous semiconductor film by the poly-crystalline semiconductor thin film on the epitaxial growth from the non-metal Sikkim seed. ; Non-metallic seed epitaxial growth, low temperature crystallization, polycrystalline silicon, polycrystalline TFT