Method for crystallizing amorphous semiconductor thin film by epitaxial growth using non-metal seed and method for fabricating poly-crystalline thin film transistor using the same

摘要

A method for crystallizing an amorphous semiconductor thin film using a non-metal seed epitaxial growth (NSEG) is provided. The method includes the steps of: forming a pair of non-metal seeds for inducing a crystallization of an amorphous semiconductor thin film at a predetermined distance on a transparent insulation substrate; depositing the amorphous semiconductor thin film on the insulation substrate; and heat-treating the insulation substrate to thereby epitaxially grow a poly-crystalline semiconductor thin film from the non-metal seeds, and to thus crystallize the amorphous semiconductor thin film. In the crystallization method, non-metal seeds are used instead of using crystallization induced metal to thereby epitaxially grow the poly-crystalline semiconductor thin film and to thus realize the amorphous semiconductor thin film without having metal pollution.