DEVELOPMENT OF HIGHLY TRANSPARENT THERMALLY DECOMPOSED NITRIDE-BASED MULTI N-TYPE OHMIC CONTACT LAYER AND GROUP III NITRIDE LIGHT EMITTING DEVICES WITH THE SAME N-TYPE ELECTRODES

摘要

An optical device and its fabricating method are provided to enhance the ohmic contact characteristic at an interfacial surface of a n-type nitride-based cladding layer by employing a conductive thin film consisting of thermally decomposed nitride. A group-Ill nitride-based light emitting diode includes a substrate, an n-type nitride-based cladding layer(10) formed on the substrate, and a highly transparent multi-layered n-type schottky contact electrode structure formed on the n-type nitride-based cladding layer. A highly transparent multi-layered n-type schottky contact layer having at least one thermally decomposed nitride conductive layer is formed on the n-type nitride cladding layer. The thermally decomposed nitride conductive layer is made of nickel nitride, copper nitride, zinc nitride, indium nitride or tin nitride.