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Erratum to: Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes

机译：错误至：用于垂直结构发光二极管的分子束外延生长N型GaN的Ti / Al欧姆触点的电特性

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Joon-Woo Jeon; Tae-Yeon Seong; Gon Namkoong;
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年度 2012
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1. Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes [J] . JOON-WOO JEON, TAE-YEON SEONG, GON NAMGOONG Journal of Electronic Materials . 2012,第8期

机译：垂直结构发光二极管的分子束外延生长N极性n型GaN的Ti / Al欧姆接触的电学特性
2. Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes [J] . Joon-Woo Jeon, Tae-Yeon Seong, Gon Namgoong Journal of Electronic Materials . 2012,第8期

机译：垂直结构发光二极管的Ti / Al欧姆接触分子束外延生长的N极性n型GaN的电学特性
3. Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes [J] . Jung SY, Seong TY, Kim H, Electrochemical and solid-state letters . 2009,第7期

机译：垂直结构发光二极管的Ti / Al欧姆接触与硫钝化N面n型GaN的电学性质
4. High reflectivity and thermal-stability Cr-based Reflectors and n-type Ohmic Contact for GaN-based flip-chip light-emitting diodes [C] . Kuang-Po Hsueh, Kuo-Chun Chiang, Charles J. Wang, Gallium Nitride Materials and Devices . 2006

机译：高反射率和热稳定性Cr基反射器和GaN基倒装芯片发光二极管的n型欧姆接触
5. Fabrication and characterization of ohmic contacts to p- and n-type silicon carbide with applications to p-n junction diodes. [D] . Oder, Tom Nelson. 1999

机译：p型和n型碳化硅的欧姆接触的制造和表征，并应用于p-n结二极管。
6. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT [O] . Cong Wang, Nam-Young Kim 2012

机译：AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
7. Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes [O] . (Moon Seon Young), Son Jun Ho, Choi Kyoung Jin, 2014

机译：铟作为基于GaN的垂直发光二极管的N面n-GaN的有效欧姆接触
8. W and WSi(x) Ohmic Contacts on p- And n-Type GaN; Journal of Vacuum Science and Technology A [R] . Abernathy, C. R. , Cao, X. A. , Eizenberg, M. , 1998

机译：p型和n型GaN上的W和W si（x）欧姆接触;真空科学与技术杂志a.

Erratum to: Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes

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